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| SHINDENGEN HVX-2 Series Power MOSFET N-Channel Enhancement type 2SK2333 ( F6F70HVX2 ) 700V 6A FEATURES *oe Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. *oe static Rds(on) is small. The *oe switching time is fast. The *oe Avalanche resistance guaranteed. APPLICATION *oe Switching power supply of AC 240V input OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) *oe High voltage power supply *oe Inverter RATINGS *oeAbsolute Maximum Ratings * = 25*Z*j Tc i Item Symbol Conditions Ratings Storage Temperature Tstg -55*150 Channel Temperature Tch 150 Drain-Source Voltage VDSS 700 Gate-Source Voltage VGSS *}30 ID 6 Continuous Drain Current* DC*j i Continuous Drain Current* Peak) i IDP Pulse width*...10Es, Duty cycle*...1/1008 1 Continuous Source Current* DC*j i IS 6 Total Power Dissipation PT 50 Repetitive Avalanche Current IAR Tch= 150*Z 6 Single Avalanche Energy EAS Tch= 25*Z 190 Repetitive Avalanche Energy EAR Tch= 25*Z 19 Dielectric Strength Vdis Terminals to case,* AC 1 minute @ 2 Mounting Torque TOR * i Recommended torque * Nm *j F 0.3 0.5 Unit *Z V A W A mJ kV Nm Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd HVX-2 Series Power MOSFET Electrical Characteristics Tc = 25 Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current gfs Forward Traconductance Static Drain-Source On-tate Resistance RDS(ON) VTH Gate Threshold Voltage VSD Source-Drain Diode Forward Voltage jc Thermal Resistance Total Gate Charge Qg Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Time ton Turn-Off Time toff Conditions 2SK2333 ( F6F70HVX2 ) Min. 700 Typ. Max. 250 0.1 3.0 2.5 5.0 1.5 3.0 2.0 3.5 1.5 2.5 Unit V A S V / nC pF 110 250 ns ID = 1mA, VGS = 0V VDS = 700V, VGS = 0V VGS = 30V, VDS = 0V ID = 3A, VDS = 10V ID = 3A, VGS = 10V ID = 1mA, VDS = 10V IS = 3A, VGS = 0V junction to case VDD = 400V, VGS = 10V, ID = 6A VDS = 10V, VGS = 0V, f = 1MHZ ID = 3A, RL = 50, VGS = 10V 35 1250 250 530 60 160 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd 2SK2333 16 Tc = -55C Transfer Characteristics 25C Drain Current ID [A] 12 100C 8 150C 4 VDS = 25V pulse test TYP 0 5 10 15 20 0 Gate-Source Voltage VGS [V] 2SK2333 10 Static Drain-Source On-state Resistance Static Drain-Source On-state Resistance RDS(ON) [] ID = 3A 1 0.1 0.01 VGS = 10V pulse test TYP -50 0 50 100 150 Case Temperature Tc [C] 2SK2333 5 Gate Threshold Voltage Gate Threshold Voltage VTH [V] 4 3 2 1 VDS = 10V ID = 1mA TYP -50 0 50 100 150 0 Case Temperature Tc [C] 2SK2333 100 Safe Operating Area 10 Drain Current ID [A] 100s 200s 1 R DS(ON) limit 1ms 10ms 0.1 DC Tc = 25C Single Pulse 0.01 1 10 100 1000 Drain-Source Voltage VDS [V] 2SK2333 Transient Thermal Impedance 10 1 0.1 Transient Thermal Impedance jc(t) [C/W] 0.01 0.001 10-4 10-2 10-3 10-1 100 101 102 Time t [s] 2SK2333 100 Single Avalanche Energy Derating Single Avalanche Energy Derating [%] 80 60 40 20 0 0 50 100 150 Starting Channel Temperature Tch [C] 2SK2333 10000 Capacitance Ciss 1000 Capacitance Ciss Coss Crss [pF] Coss 100 Crss 10 Tc=25C TYP 1 0 20 40 60 80 100 Drain-Source Voltage VDS [V] 2SK2333 Single Avalanche Current - Inductive Load VDD = 100V VGS = 15V 0V Rg = 100 IAS = 6A 10 EAR = 19mJ EAS = 190mJ Single Avalanche Current IAS [A] 1 0.1 0.1 1 10 100 Inductance L [mH] 2SK2333 100 Power Derating 80 Power Derating [%] 60 40 20 0 0 50 100 150 Case Temperature Tc [C] 2SK2333 500 Gate Charge Characteristics 20 Drain-Source Voltage VDS [V] 15 VDD = 400V 300 200V 100V VGS 10 200 5 100 ID = 6A 0 0 10 20 30 40 50 0 Gate Charge Qg [nC] Gate-Source Voltage VGS [V] 400 VDS |
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